Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps

被引：7

作者：

Nakamura, S ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Sakyo, Kyoto 6068501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 256卷 / 3-4期

基金：

日本学术振兴会;

关键词：

surface structure; chemical vapor deposition processes; semiconducting silicon compounds;

D O I：

10.1016/S0022-0248(03)01386-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Homoepitaxial growth on 6H-SiC (0 0 0 1)-vicinal faces by horizontal cold-wall chemical vapor deposition operating at 1500degrees C has been re-investigated. It was found that the off-direction toward < 0 1 <(1)over bar> 0 > can provide smooth surfaces, even after long-time growth, as for < 1 1 (2) over bar 0 >-off, if epitaxial growth with a proper procedure is carried out on well polished substrates. Based on observations of surface step structures by atomic force microscopy, the morphological tendency and evolution of surface steps by the growth on < 0 1 (1) over bar 0> -off substrates are discussed. (C) 2003 Elsevier B.V. All rights reserved.

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收藏

页码：347 / 351

页数：5

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