Variable optical buffer using slow light in semiconductor nanostructures

被引:273
作者
Chang-Hasnain, CJ [1 ]
Ku, PC
Kim, J
Chuang, SL
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
integrated optics; nanotechnology; optical buffer; quantum optics;
D O I
10.1109/JPROC.2003.818335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure with presence of strain is analyzed with the inclusion of the polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
引用
收藏
页码:1884 / 1897
页数:14
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