Comparison between experiment and calculated band structures for DyN and SmN

被引:46
作者
Preston, A. R. H. [1 ]
Granville, S. [1 ]
Housden, D. H. [1 ]
Ludbrook, B. [1 ]
Ruck, B. J. [1 ]
Trodahl, H. J. [1 ]
Bittar, A. [2 ]
Williams, G. V. M. [2 ]
Downes, J. E. [3 ]
DeMasi, A. [4 ]
Zhang, Y. [4 ]
Smith, K. E. [4 ]
Lambrecht, W. R. L. [5 ]
机构
[1] Victoria Univ Wellington, Sch Chem & Phys Sci, MacDiarmid Inst Adv Mat & Nanotechnol, Wellington, New Zealand
[2] Ind Res Ltd, Lower Hutt, New Zealand
[3] Macquarie Univ, Dept Phys, N Ryde, NSW 2109, Australia
[4] Boston Univ, Dept Phys, Boston, MA 02215 USA
[5] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.76.245120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with densities of states obtained from LSDA+U calculations, although for SmN the calculations predict a zero band gap.
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页数:5
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