Characterization of surface potential and strain at ultrathin oxide silicon interface by photoreflectance spectroscopy

被引：7

作者：

Imai, T ^{[1
]}

Fujimoto, A ^{[1
]}

Okuyama, M ^{[1
]}

Hamakawa, Y ^{[1
]}

机构：

[1] WAKAYAMA NATL COLL TECHNOL,DEPT ELECTR ENGN,WAKAYAMA 644,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

Si; Si-SiO2; interface; surface potential; strain; modulation spectroscopy; photoreflectance;

D O I：

10.1143/JJAP.35.1073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si surface potential and strain at the Si-SiO2 structure with a thermally grown or a native SiO2 ultrathin film have been characterized by photoreflectance (PR) spectroscopy. The surface potentials of Si-SiO2 structures are determined from the modulation light intensity dependence of the PR signal intensity. Although the signal intensity decreases drastically with increasing SiO2 film thickness, it can be increased by applying dc bias voltage and increasing the surface potential of Si. The strains at the Si surface have been obtained by an analysis of the transition energy shift in the SiO2/Si structure with a thermally oxidized ultrathin film.

引用

页码：1073 / 1076

页数：4

共 8 条

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