The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

被引：25

作者：

Kim, Hyun-Suk ^{[1
]}

Park, Kyung-Bae ^{[1
]}

Son, Kyoung Seok ^{[1
]}

Park, Joon Seok ^{[1
]}

Maeng, Wan-Joo ^{[1
]}

Kim, Tae Sang ^{[1
]}

Lee, Kwang-Hee ^{[1
]}

Kim, Eok Su ^{[1
]}

Lee, Jiyoul ^{[1
]}

Suh, Joonki ^{[1
]}

Seon, Jong-Baek ^{[1
]}

Ryu, Myung Kwan ^{[1
]}

Lee, Sang Yoon ^{[1
]}

Lee, Kimoon ^{[2
]}

Im, Seongil ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Display Lab, Yongin 446712, Gyeonggi Do, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 10期

关键词：

HIGH-MOBILITY; ELECTRONIC-STRUCTURE; ROOM-TEMPERATURE; TRANSPARENT; TFTS; INSTABILITY; CHANNEL; VOLTAGE;

D O I：

10.1063/1.3488823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O-2/Ar gas flow ratio was found to result in the highest stability under bias stress experiments. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488823]

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页数：3

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共 17 条

[1] The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Fortunato, E. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (09) :H248-H251

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays [J].

Chiang, CS ;

Kanicki, J ;

Takechi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9A) :4704-4710

[4] Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses [J].

Cho, In-Tak ;

Lee, Jeong-Min ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (01)

[5] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[6] Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure [J].

Jeong, IS ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2946-2948

[7] Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x:: Optical analyses and first-principle calculations [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :3098-+

[8] Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

JOURNAL OF DISPLAY TECHNOLOGY, 2009, 5 (07) :273-288

[9] Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [J].

Kim, Chang-Jung ;

Kim, Sangwook ;

Lee, Je-Hun ;

Park, Jin-Seong ;

Kim, Sunil ;

Park, Jaechul ;

Lee, Eunha ;

Lee, Jaechul ;

Park, Youngsoo ;

Kim, Joo Han ;

Shin, Sung Tae ;

Chung, U-In .

APPLIED PHYSICS LETTERS, 2009, 95 (25)

[10] The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors [J].

Kwon, Jang-Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Lee, Kwang-Hee ;

Park, Joon Seok ;

Kim, Tae Sang ;

Ji, Kwang Hwan ;

Choi, Rino ;

Jeong, Jae Kyeong ;

Koo, Bonwon ;

Lee, Sangyun .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II213-II215