Electroless nickel bath for wafer bumping: Influence of additives

被引：12

作者：

Chen, X ^{[1
]}

Yi, J ^{[1
]}

Qi, G ^{[1
]}

Liu, F ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING | 2000年

关键词：

D O I：

10.1109/EMAP.2000.904128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminium bond pads on silicon wafers have two distinct features: tiny in area and thin in material. This necessitates special considerations on the design of the electroless nickel (EN) bath chemistry to deposit EN metallization or bump on such small and delicate substrates for flip chip packaging applications. It also calls for special quality control practice and care during EN plating to produce consistent and high quality nickel deposits on the bond pads. Majorities of the commercial EN solutions and processes that perform well on bulk aluminium have been observed not capable of plating acceptable nickel bumps. Specially formulated EN bath catering for nickel bumping applications is in demand in the electronics packaging industry. This study investigated the influence of EN bath chemistry on quality of electrolessly deposited nickel-phosphorus bumps on wafers. A special EN solution and process has been developed which is capable of producing quality EN metallization and bumps.

引用

页码：12 / 17

页数：6

共 14 条

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