The large magnetoresistance property of La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition position

被引：52

作者：

Liu, JM ^{[1
]}

Ong, CK

机构：

[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality (001) thin film La0.5Sr0.5CoO3-x (LSCO) has been prepared on (001) SrTiO3 substrates by pulsed laser deposition under different oxygen pressures with and without postannealing. C-axis expansion of the LSCO with reducing oxygen pressure was revealed. The electrical resistivity increased over five orders of magnitude when oxygen pressure varied from 1.0 mbar (plus postannealing) to 10(-3) mbar. The negative magnetoresistance (n-MR) property as a function of temperature and oxygen pressure was investigated. Linear dependence of the n-MR ratio on magnetic field and temperature was found and significant effect of oxygen stoichiometry on the n-MR was demonstrated. The film prepared at 650 degrees C and 0.1 mbar oxygen shows a n-MR ratio of -16% at 81 K under a field of only 0.2 T. (C) 1998 American Institute of Physics. [S0003-6951(98)01134-6].

引用

页码：1047 / 1049

页数：3

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