A Wide Temperature Range Voltage Bandgap Reference Generator in 32nm CMOS Technology

被引:0
作者
Singh, Anjani Kumar [1 ]
Pal, Pratosh Kumar [1 ]
Pattanaik, Manisha [1 ]
机构
[1] Atal Bihari Vajpayee Indian Inst Informat Technol, Gwalior, India
来源
2015 GLOBAL CONFERENCE ON COMMUNICATION TECHNOLOGIES (GCCT) | 2015年
关键词
Bandgap voltage reference; PTAT; CTAT; temperature coefficient; 32nm CMOS technology; operational amplifier; poly-silicon resistors; start-up circuit;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a new CMOS based Bandgap voltage reference generator (BGR) circuit by using polysilicon resistors in 32nm CMOS technology. This reference generator uses a three stage operational amplifier for improved performance over previously proposed BGR circuits. The proposed design is simulated in Synopsys HSPICE simulator. This circuit produces an output reference voltage of 0.725V at the room temperature (25 degrees C) for the supply voltage of 1.8V. Analysis shows that, a very low temperature coefficient (TC) of 13ppm/degrees C is obtained in the output reference voltage for the temperature range of-40 degrees C to 100 degrees C. Using poly-silicon resistor the area is reduced, without losing too much control over current consumption.
引用
收藏
页码:688 / 691
页数:4
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