Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

被引：22
|
作者：
Domingo, N. [1 ,2 ]
Farokhipoor, S. [3 ]
Santiso, J. [1 ,2 ]
Noheda, B. [3 ]
Catalan, G. [1 ,2 ,4 ]
机构：
[1] CSIC, ICN2, Campus UAB, Barcelona 08193, Spain
[2] BIST, Campus UAB, Barcelona 08193, Spain
[3] Univ Groningen, Zernike Inst Adv Mat, Nanostruct Funct Oxides, Nijenborgh 4, NL-9747 AG Groningen, Netherlands
[4] ICREA, Barcelona 08010, Spain
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2017年 / 29卷 / 33期
关键词：
domain walls; BiFeO3; multiferroic; magnetoresistance; atomic force microscope; scanning probe microscopy; SEMICONDUCTORS; CONDUCTION; CRYSTALS;
D O I：
10.1088/1361-648X/aa7a24
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
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页数：6
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