Quasi-TEM spectral domain approach for calculating distributed inductance and resistance of microstrip on Si-SiO2 substrate

被引：19

作者：

Tripathi, A ^{[1
]}

Hahm, YC ^{[1
]}

Weisshaar, A ^{[1
]}

Tripathi, VK ^{[1
]}

机构：

[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quasi-TEM spectral domain approach based on the vector magnetic potential equation to calculate frequency dependent distributed inductance and the associated distributed series resistance of a microstrip on Si-SiO2 substrate is presented. It is shown that the calculated frequency dependent inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions.

引用

页码：1330 / 1331

页数：2

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