High energy x-ray photoelectron spectroscopy spectra of Si3N4 measured by Cr Kα

被引：1

作者：

Hoflijk, I. ^{[1
]}

Vanleenhove, A. ^{[1
]}

Vaesen, I. ^{[1
]}

Zborowski, C. ^{[1
]}

Artyushkova, K. ^{[2
]}

Conard, T. ^{[1
]}

机构：

[1] IMEC, MCACSA, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Phys Elect, 18725 Lake Dr East, Chanhassen, MN 55317 USA

来源：

SURFACE SCIENCE SPECTRA | 2022年 / 29卷 / 01期

关键词：

SiO2; HAXPES; Cr K alpha;

D O I：

10.1116/6.0001524

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr K alpha radiation at 5414.8 eV include two survey scans (Al K alpha and Cr K alpha) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.

引用

页数：8

共 38 条

[31] Resistive switching in a LaMnO3+δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy
Meunier, Benjamin
Martinez, Eugenie
Rodriguez-Lamas, Raquel
Pla, Dolors
Burriel, Monica
Boudard, Michel
Jimenez, Carmen
Rueff, Jean-Pascal
Renault, Olivier
JOURNAL OF APPLIED PHYSICS, 2019, 126 (22)
[32] Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization
Weiland, C.
Krajewski, J.
Opila, R.
Pallem, V.
Dussarrat, C.
Woicik, J. C.
SURFACE AND INTERFACE ANALYSIS, 2014, 46 (06) : 407 - 417
[33] Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering
Boujamaa, R.
Martinez, E.
Pierre, F.
Renault, O.
Detlefs, B.
Zegenhagen, J.
Baudot, S.
Gros-Jean, M.
Bertin, F.
Dubourdieu, C.
APPLIED SURFACE SCIENCE, 2015, 335 : 71 - 77
[34] Reference survey spectra of elemental solid measured with Cr Kα photons as a tool for Quases analysis (4): Group III and IV elements (B, Al, In, C, Si, Ge, Sn, Pb)
Zborowski, C.
Conard, T.
Vanleenhove, A.
Hoflijk, I.
Vaesen, I.
SURFACE SCIENCE SPECTRA, 2022, 29 (02):
[35] Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
Gueye, Ibrahima
Ueda, Shigenori
Ogura, Atsushi
Nagata, Takahiro
ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (05) : 3237 - 3248
[36] Operando hard X-ray photoelectron spectroscopy study of buried interface chemistry of Au/InO1.16C0.04/Al2O3/p+-Si stacks
Gueye, Ibrahima
Kobayashi, Riku
Ueda, Shigenori
Nabatame, Toshihide
Tsukagoshi, Kazuhito
Ogura, Atsushi
Nagata, Takahiro
APPLIED SURFACE SCIENCE, 2022, 593
[37] Investigation of the corrosion behavior of AlCoCrFeNi high-entropy alloy in 0.5 M sulfuric acid solution using hard and soft X-ray photoelectron spectroscopy
Huang, Pei-Chen
Chu, Po-Chih
Yang, Ting-Jia
Wang, Ji-Zhen
Lin, Wei-Chun
APPLIED SURFACE SCIENCE, 2024, 648
[38] Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR
Fetzer, Roman
Ouardi, Siham
Honda, Yusuke
Liu, Hong-xi
Chadov, Stanislav
Balke, Benjamin
Ueda, Shigenori
Suzuki, Motohiro
Uemura, Tetsuya
Yamamoto, Masafumi
Aeschlimann, Martin
Cinchetti, Mirko
Fecher, Gerhard H.
Felser, Claudia
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (16)

← 1 2 3 4 →