High energy x-ray photoelectron spectroscopy spectra of Si3N4 measured by Cr Kα

被引：1

作者：

Hoflijk, I. ^{[1
]}

Vanleenhove, A. ^{[1
]}

Vaesen, I. ^{[1
]}

Zborowski, C. ^{[1
]}

Artyushkova, K. ^{[2
]}

Conard, T. ^{[1
]}

机构：

[1] IMEC, MCACSA, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Phys Elect, 18725 Lake Dr East, Chanhassen, MN 55317 USA

来源：

SURFACE SCIENCE SPECTRA | 2022年 / 29卷 / 01期

关键词：

SiO2; HAXPES; Cr K alpha;

D O I：

10.1116/6.0001524

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr K alpha radiation at 5414.8 eV include two survey scans (Al K alpha and Cr K alpha) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.

引用

页数：8

共 38 条

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