Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors

We investigated solvent-mediated threshold voltage (V-TH) shift in solution-processed zinc-tin oxide (ZTO) thin film transistors (TFTs). The ZTO TFTs showed negative V-TH shift when exposed to various organic solvents such as hexane, isopropanol, and chlorobenzene. Additionally the magnitude of the shift showed a close relationship with the dielectric constant or electronegativity of the solvent molecules. From the experiments, one of the origins of the V-TH shift in the transparent oxide TFTs appears to be closely correlated with the dipole interaction of the solvent molecules and ZTO back channel surface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485056]