Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors

被引：16

作者：

Kim, Yong-Hoon ^{[2
]}

Kim, Hyun Soo ^{[2
]}

Han, Jeong-In ^{[3
]}

Park, Sung Kyu ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Dept Text Engn, Convergence Mat & Devices Lab, Jeonju 561756, South Korea

[2] Korea Elect Technol Inst, Flexible Display Res Ctr, Songnam 463816, Gyeonggi, South Korea

[3] Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 100715, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 09期

关键词：

GAS SENSOR; FABRICATION;

D O I：

10.1063/1.3485056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated solvent-mediated threshold voltage (V-TH) shift in solution-processed zinc-tin oxide (ZTO) thin film transistors (TFTs). The ZTO TFTs showed negative V-TH shift when exposed to various organic solvents such as hexane, isopropanol, and chlorobenzene. Additionally the magnitude of the shift showed a close relationship with the dielectric constant or electronegativity of the solvent molecules. From the experiments, one of the origins of the V-TH shift in the transparent oxide TFTs appears to be closely correlated with the dipole interaction of the solvent molecules and ZTO back channel surface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485056]

引用

页数：3

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