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- [31] Optoelectronic Synapses Based on Photo-Induced Doping in MoS2/h-BN Field-Effect TransistorsADVANCED OPTICAL MATERIALS, 2021, 9 (20)Xu, Mengjian论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Engn Res Ctr Opt Instrument & Syst, Minist Educ, 516 Jungong Rd, Shanghai 200093, Peoples R China Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaXu, Tengfei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaYu, Anqi论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Engn Res Ctr Opt Instrument & Syst, Minist Educ, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaWang, Hailu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaWang, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaZubair, Muhammad论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaLuo, Man论文数: 0 引用数: 0 h-index: 0机构: Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaShan, Chongxin论文数: 0 引用数: 0 h-index: 0机构: Zhengzhou Univ, Henan Key Lab Diamond Optoelect Mat & Devices, Sch Phys & Engn, Zhengzhou 450001, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaGuo, Xuguang论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Engn Res Ctr Opt Instrument & Syst, Minist Educ, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaWang, Fang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaHu, Weida论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaZhu, Yiming论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Engn Res Ctr Opt Instrument & Syst, Minist Educ, 516 Jungong Rd, Shanghai 200093, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Shanghai 200092, Peoples R China Univ Shanghai Sci & Technol, Shanghai Key Lab Modern Opt Syst, Terahertz Technol Innovat Res Inst, 516 Jungong Rd, Shanghai 200093, Peoples R China
- [32] UV-Ozone-Assisted Solution-Processed High-k ZrO2for MoS2 Field-Effect TransistorsIEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (04) : 2789 - 2793Shi, Yepeng论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaLiu, Guoxia论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaWu, Xiaomin论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaZhou, Chengjie论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaYang, Chengzhi论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaYang, Zhenyu论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R ChinaShan, Fukai论文数: 0 引用数: 0 h-index: 0机构: Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China
- [33] Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effectCHINESE PHYSICS B, 2021, 30 (01)Li, Zhao论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R ChinaXu, Jing-Ping论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R ChinaLiu, Lu论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R ChinaZhao, Xin-Yuan论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
- [34] Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistorsJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (27)Jeon, Dae-Young论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaNam, Deuk Hyeon论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaLee, Dong Su论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaLee, Seoung-Ki论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaPark, Min论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaPark, So Jeong论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Sch Elect Engn, Seoul 136701, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South KoreaKim, Gyu-Tae论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Sch Elect Engn, Seoul 136701, South Korea Korea Inst Sci & Technol, Inst Adv Composite Mat, Seoul 55324, Joellabuk Do, South Korea
- [35] Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory ApplicationsACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (11) : 4711 - 4717Jiang, Xixi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaHu, Xiaobing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaBian, Jihong论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, Kai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaChen, Lin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhu, Hao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaSun, Qingqing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
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- [37] High-performance cold-source field-effect transistors based on Cd3C2/boron phosphide heterojunctionMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2025, 311Ma, Zelong论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaWang, Danni论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaLi, Songyang论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaChen, Jingjun论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaLi, Xu论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaBian, Baoan论文数: 0 引用数: 0 h-index: 0机构: Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R ChinaLiao, Bin论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Coll Nat Sci & Technol, Beijing 100875, Peoples R China Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
- [38] Electrical characterization of 2D materials-based field-effect transistors2D MATERIALS, 2021, 8 (01)Mitta, Sekhar Babu论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaChoi, Min Sup论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea Columbia Univ, Dept Mech Engn, New York, NY 10027 USA Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaNipane, Ankur论文数: 0 引用数: 0 h-index: 0机构: Columbia Univ, Dept Elect Engn, New York, NY 10027 USA Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaAli, Fida论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaKim, Changsik论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaTeherani, James T.论文数: 0 引用数: 0 h-index: 0机构: Columbia Univ, Dept Elect Engn, New York, NY 10027 USA Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaHone, James论文数: 0 引用数: 0 h-index: 0机构: Columbia Univ, Dept Mech Engn, New York, NY 10027 USA Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South KoreaYoo, Won Jong论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea
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