Phases and morphology of CuInTe2 films and their electric properties

The chalcopyrite structure of CuInTe2 is a p-type semiconductor with about 1.1?eV band gap and can be used as the absorber layer material. In this work CuInTe2 film samples were synthesized by chemical co-reduction method. The phases of the product samples were analyzed by X-ray diffraction (XRD) and the morphology was observed using field emission scanning electron microscopy (FESEM). The electrical properties of the product films were measured by the four probe resistance instrument. Experimental results show that, CuInTe2 films can be obtained at the reaction temperatures of 180??C, 200??C and 220??C. For preparing CuInTe2 films, the nitrate raw materials are superior to chloride raw materials. Adding the number of reaction can increase the probability of preparing CuInTe2 films and also effectively improve the crystallinity. While adding the subsequent heat treatment process does not achieve better results. The obtained films are relatively continuous and all contain three elements of Cu, In and Te. The measured resistivities are between 0.152 K??cm and 0.187 K??cm.