High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector

被引：41

作者：

Chiu, YJ ^{[1
]}

Fleischer, SB ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 07期

关键词：

current distribution; electrooptic measurements; low-temperature grown GaAs; photodetector; p-i-n photodiodes; semiconductor device; traveling-wave devices; ultrafast electronics;

D O I：

10.1109/68.681301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

WE report a novel type of p-i-n traveling-wave photodetector utilizing low-temperature-grown GaAs (LTG-GaAs), The devices show a record impulse response time (530-fs full-width at half-maximum, similar to 560 GHz -3-dB bandwidth) which agrees with theoretical estimates. The effects of various limiting factors on the device performance were analyzed theoretically and compared with measurements obtained by electrooptic characterization of our devices. Calculations indicate that the device speed is dominated by the short carrier lifetime, DC external quantum efficiencies as high as 8% were obtained.

引用

页码：1012 / 1014

页数：3

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