Phase diagram and specific band gap features of novel TlGaSe2: Zn+2(Cd+2, Hg+2) crystals

被引：2

作者：

Makhnovets, G. ^{[1
]}

Myronchuk, G. ^{[1
]}

Piskach, L. ^{[2
]}

Parasyuk, O. ^{[2
]}

Kityk, I. V. ^{[1
,3
]}

Piasecki, M. ^{[1
,4
]}

机构：

[1] Lesya Ukrainka Eastern European Natl Univ, Dept Expt Phys & Informat Measuring Technol, 13 Voli Ave, UA-43025 Lutsk, Ukraine

[2] Lesya Ukrainka Eastern European Natl Univ, Dept Inorgan & Phys Chem, 13 Voli Ave, UA-43025 Lutsk, Ukraine

[3] Czestochowa Tech Univ, Fac Elect Engn, Inst Optoelect & Measuring Syst, Armii Krajowej 17, PL-42200 Czestochowa, Poland

[4] J Dlugosz Univ, Inst Phys, Armii Krajowej 13-15, PL-42200 Czestochowa, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 768卷

关键词：

Selenides; Semiconductor; Solid solution; Phase diagram; Crystal growth; Bridgman-Stokbarger; OPTICAL-ABSORPTION; TEMPERATURE-DEPENDENCE; ENERGY-GAP; SPECTRA; TRANSITIONS; GROWTH; TLINS2; TAILS; DEFECTS;

D O I：

10.1016/j.jallcom.2018.07.282

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present work, we investigate, in detail, the phase diagrams of the TlGaSe2-Zn(Cd, Hg) Se systems, which are quasi-binary and eutectic type. The solid phase solubility on the basis of components did not exceed 5 mol% at 670 K. The crystals of TlGaSe2: Zn+2( Cd+2, Hg+2)) solid solutions were prepared by Bridgman-Stokbarger method. It was established that the doping of Zn+2, Cd+2, Hg+2 leads to a slight decrease in the values of both the direct and indirect band gap energies with respect to the that in undoped TlGaSe2 crystal. The temperature dependence of the band gap values for all the synthesized compounds is crucial for semiconductor applications. Also, the dominant mechanisms are proposed that contribute to the fundamental absorption edge tailing. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：667 / 675

页数：9

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