Low temperature sintering mechanism for Li2Mg3SnO6 microwave dielectric ceramics

被引：23
作者：
Fu, Zhifen [1 ]
Li, Can [1 ]
Ma, Jianli [1 ]
Wu, Yilong [1 ]
机构：
[1] Anhui Univ Sci & Technol, Sch Mech & Optoelect Phys, Huainan 232001, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2019年 / 250卷
关键词：
Dielectric properties; Microstructure; Li2Mg3SnO6; Ceramics; EVOLUTION; SYSTEMS; LIF;
D O I：
10.1016/j.mseb.2019.114438
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low-fired Li2Mg3SnO6 ceramics were fabricated via the conventional solid-state reaction route, and the effects of LiF-doping on their sintering mechanism and microwave dielectric properties were investigated. Sintering temperature of Li2Mg3SnO6 ceramics were effectively reduced to 900 degrees C due to the substitution of F- for O-2, which could cause weakening of oxygen bond strength induced reduced the intrinsic sintering temperature and facilitates the diffusion process. Low-fired ceramics inhibited volatilization of Li and improved relative density. Well-densified Li2Mg3SnO6-4 wt% LiF ceramics were obtained with optimum microwave dielectric properties of epsilon(r) = 12.3, Q x f = 96280 GHz and tau(f) = -40.7 ppm/degrees C at 900 degrees C. Such samples were compatible with Ag electrodes and suitable for LTCC applications.
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