Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method

被引：6

作者：

Honda, Tohru ^{[1
]}

Oda, Takuto ^{[1
]}

Mashiyama, Yoshihiro ^{[1
]}

Hara, Hiroki ^{[2
]}

Sato, Mitsunobu ^{[2
]}

机构：

[1] Kogakuin Univ, Grad Sch Engn, Dept Elect Engn & Elect, 2665-1 Nakano Machi, Tokyo 1920015, Japan

[2] Kogakuin Univ, Coordinat Engn Lab, Tokyo 1920015, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 | 2010年 / 7卷 / 10期

关键词：

MgZnO; spin-coating; precursors; structure; electrical properties; transparent electrodes; LEDs;

D O I：

10.1002/pssc.200983871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgZnO films were fabricated by the molecular precursor method (MPM) for their application as UV transparent electrodes. It was clarified that annealing under suitable conditions using an Ar gas flow is effective for the realization of c-axis-oriented MgZnO films in the time of a pyrolysis reaction. The resistivity of the Ga-doped Mg0.1Zn0.9O film was 2.5x10(-2) Omega.cm. The resistivity of the c-axis-oriented MgZnO films was lower than that of polycrystalline films. This is due to the reduction of the potential barrier at the boundaries of the crystallites. The spontaneous polarization affects the potential barrier. The c-axis orientation reduces the potential barrier along the deposition plane. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2471 / 2473

页数：3

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