Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

被引：11

作者：

Yun, Seung Jae ^{[1
]}

Lee, Yong Woo ^{[1
]}

Son, Se Wan ^{[1
]}

Byun, Chang Woo ^{[1
]}

Reddy, A. Mallikarjuna ^{[1
]}

Joo, Seung Ki ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, RIAM, Seoul 151744, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2012年 / 8卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

copper (Cu); thick gate; damascene; gate planarization (GP); low temperature polycrystalline silicon (LTPS); thin-film transistors (TFTs); metal-induced lateral crystallization (MILC); active-matrix organic light-emitting diode (AMOLED); AM-LCDS; CRYSTALLIZATION;

D O I：

10.1007/s13391-012-2122-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550A degrees C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm(2)/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

引用

页码：397 / 399

页数：3

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