Double Contacts for Improved Performance of Graphene Transistors

被引：76

作者：

Franklin, Aaron D. ^{[1
]}

Han, Shu-Jen ^{[1
]}

Bol, Ageeth A. ^{[1
]}

Perebeinos, Vasili ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期

关键词：

Contact geometry; contact resistance; double contacts; field-effect transistor; graphene; TRANSPORT;

D O I：

10.1109/LED.2011.2173154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new double-contact geometry for graphene devices is studied and compared to traditional top contacts. Double contacts consist of metal below and above the graphene in a sandwich-type configuration. Four-probe structures were tested for both single-layer [chemical-vapor-deposition (CVD)-grown] graphene and bilayer (mechanically exfoliated) graphene, with both showing a decrease in contact resistance of at least 40% and an increase in transconductance greater than 20%. CVD-grown single-layer graphene transistors exhibited contact resistance as low as 260 Omega . mu m, with an average of 320 Omega . mu m. This new geometry can help minimize the impact of contacts on graphene device performance.

引用

页码：17 / 19

页数：3

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