Junction temperature measurement of light-emitting diodes by voltage-temperature relation method

被引：0

作者：

Yang, Y. K. ^{[1
]}

Lien, W. C. ^{[1
]}

Huang, Y. C. ^{[1
]}

Chen, N. C. ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Inst Electroopt Engn, Tao Yuan, Taiwan

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The voltage-temperature relation of a fight-emitting diode is adopted to determine the junction temperature. This study compares two different methods for junction temperature measurement. Both methods yield results are consistent with the largest difference being only 3.5K.

引用

页码：1248 / 1249

页数：2

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