Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

被引：2

作者：

Endres, B. ^{[1
]}

Ciorga, M. ^{[1
]}

Wagner, R. ^{[1
]}

Ringer, S. ^{[1
]}

Utz, M. ^{[1
]}

Bougeard, D. ^{[1
]}

Weiss, D. ^{[1
]}

Back, C. H. ^{[1
]}

Bayreuther, G. ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-8400 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期

关键词：

current density; gallium arsenide; Hanle effect; III-V semiconductors; numerical analysis; spin dynamics; spin polarised transport; SEMICONDUCTOR; SPINTRONICS; TRANSPORT; DEVICES;

D O I：

10.1063/1.3691175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 mu m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691175]

引用

页数：4

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