Luminescence properties of InGaN-based dual-wavelength light-emitting diodes with different quantum-well arrangements

被引：5

作者：

Zhang, Minyan ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Li, Yufeng ^{[3
]}

Ding, Wen ^{[3
]}

Wang, Hong ^{[3
]}

Zhao, Yukun ^{[3
]}

Zhang, Weihan ^{[3
]}

Zheng, Min ^{[3
]}

Tian, Zhenhuan ^{[3
]}

Su, Xilin ^{[4
]}

Hou, Xun ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China

[4] Shaanxi Supernova Lighting Technol Co Ltd, Xian 710077, Shaanxi, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 05期

基金：

国家高技术研究发展计划(863计划);

关键词：

InGaN; light-emitting diodes; quantum wells; TECHNOLOGY; BARRIER; LEDS;

D O I：

10.1002/pssa.201431748

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optimized dual-wavelength InGaN-based vertical light-emitting diode (LEDs) structures were investigated by numerical simulations. The results show that different quantum-well arrangements in the active region play an important role in obtaining dual-wavelength emission. It is a better way to obtain the dual-wavelength with uniform intensity by arranging quantum wells (QW) with low indium content near the p-side and the QW with high indium near the n-side. This is because the QWs with lower indium near the p-side layer have higher hole-injection efficiency. On the other hand, arranging QW with high indium content near the p-side leads to poor hole-injection efficiency due to the high polarization fields. The physical and optical mechanisms of these phenomena were explained by the intensity of electrostatic fields, energy-band diagrams, and carrier-concentration distribution in the active region of LEDs.

引用

页码：954 / 959

页数：6

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