Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

被引：20

作者：

Fujii, Shuntaro ^{[1
]}

Kuroki, Shin-Ichiro ^{[1
]}

Zhu, Xiaoli ^{[1
]}

Numata, Masayuki ^{[1
]}

Kotani, Koji ^{[1
]}

Ito, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

CW laser; crystallization; CLC; poly-Si; grain; strain;

D O I：

10.1143/JJAP.47.3046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 x 2 mu m(2) grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.

引用

页码：3046 / 3049

页数：4

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