SnTe thermoelectrics: Dual step approach for enhanced performance

被引:60
作者
Bhat, D. Krishna [1 ]
Shenoy, U. Sandhya [2 ]
机构
[1] Natl Inst Technol Karnataka, Dept Chem, Mangalore 575025, India
[2] Srin Univ, Coll Engn & Technol, Dept Chem, Mangalore 574146, India
关键词
Thermoelectrics; Doping; Resonance; Tin telluride; Lead; Zinc; CO-DOPED SNTE; TIN TELLURIDE; STRATEGIES; MAGNESIUM; BI;
D O I
10.1016/j.jallcom.2020.155181
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Doping of SnTe to achieve desirable properties has been a wide spread approach in the recent past to enhance its thermoelectric performance. Herein, we apply a dual approach: Pb doping for reduction of thermal conductivity and Zn doping for improving the power factor. The theoretical prediction of enhanced Seebeck due to increase in the band gap, introduction of the resonance levels by Zn and dominance of the heavy hole valence band, is realized experimentally as improved power factor throughout the temperature range. The accompanying reduction in the thermal conductivity by codoping Pb and Zn leads to a record high room temperature figure of merit, ZT of 0.35 (@ 300K) and ZT of 1.66 at 840 K. The ZT(average) of similar to 0.9 with 300 K as cold end and 840 K as hot end sets a new record for SnTe based materials. (C) 2020 Elsevier B.V. All rights reserved.
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页数:6
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