CdMgTe as an Electron Reflector for MgZnO/CdSeTe/CdTe Solar Cells

被引：0
作者：
Bothwell, Alexandra M. [1 ]
Drayton, Jennifer A. [1 ]
Jundt, Pascal [1 ]
Sites, James R. [1 ]
机构：
[1] Colorado State Univ, Ft Collins, CO 80523 USA
来源：
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年
基金：
美国国家科学基金会;
关键词：
CdMgTe; electron reflector; CdTe; CSS;
D O I：
10.1109/pvsc40753.2019.8980651
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CdMgTe with a 1.8-eV band gap was deposited at the back of MgZnO/CdSeTe/CdTe superstrates to create a conduction band barrier and reduce back surface recombination. To minimize CdCl2 passivation loss, substrate preheat time was varied. Photoluminescence, carrier lifetime, and quantum efficiency showed improvement with shorter preheat and secondary ion mass spectrometry profiles showed retention of CdCl2 passivation for short CdMgTe preheat. An HCl acid etch treatment and CdTe cap layer were incorporated independently after the CdMgTe on additional devices to minimize magnesium oxidation and the CdTe cap device showed initial promise with device efficiency reaching 13.1%.
引用
收藏
页码：149 / 154
页数：6
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