High-quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

In this work, ternary relaxor ferroelectric thin films 0.5mol% Mn-doped 0.36Pb(In1/2Nb1/2)O-3-0.36Pb(Mg1/3Nb2/3)O-3-0.28PbTiO(3) (Mn-PIMNT) with high Curie point were grown on the Pt/Ti/SiO2/Si substrate with the addition of La0.6Sr0.4CoO3 (LSCO) as a buffer layer. The phase and domain structure, nanoscale piezoelectric response, and macroscopic ferroelectric, dielectric, pyroelectric properties of Mn-PIMNT thin films were studied. Both the crystalline quality and the crystallographic orientation exhibited strong temperature dependence within the substrate temperature of 450-580 degrees C. Under the optimized temperature of 530 degrees C, the Mn-PIMNT thin film exhibited excellent global electrical properties with remnant polarization P-r similar to 35.6 mu C/cm(2), coercive field E-c similar to 5.1 kV/mm, dielectric constant epsilon r${\varepsilon _r}$similar to 3360, and relatively low dielectric loss tan delta similar to 0.03. It was further found that the pyroelectric coefficient of the Si-substrated Mn-PIMNT thin film reached 6.7 x 10(-4) C/m(2)center dot K. The optimized ferroelectric thin films Mn-PIMNT on Si substrate with excellent temperature stability show great potential in integrated microelectromechanical systems.