Development of a fully ion-implanted MESFET on a bulk semi-insulating 4H-SiC substrate

被引：0

作者：

Katakami, S. ^{[1
]}

Ono, S. ^{[1
]}

Arai, M. ^{[1
]}

机构：

[1] New Japan Radio Co Ltd, Saitama 3568501, Japan

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS | 2008年 / 26期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a 0.5-mu m-gate MESFET on a bulk 4H-SiC semi-insulating substrate using Ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device's RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700 degrees C were better than those of the ion-implanted MESFET annealed at 1300 degrees C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an f(T)/f(max) of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.

引用

页码：41 / 46

页数：6

共 3 条

[1] Fabrication and characterization of field-plated buried-gate SiC MESFETs [J].