Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

被引：63

作者：

Jeff, R. C., Jr. ^{[1
]}

Yun, M. ^{[1
]}

Ramalingam, B. ^{[1
]}

Lee, B. ^{[2
]}

Misra, V. ^{[2
]}

Triplett, G. ^{[1
]}

Gangopadhyay, S. ^{[1
]}

机构：

[1] Univ Missouri, Dept Elect & Comp Engn, Columbia, MO 65211 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 07期

基金：

美国国家科学基金会;

关键词：

COULOMB-BLOCKADE; ROOM-TEMPERATURE; SILICON; OXIDE; LAYER; DOTS;

D O I：

10.1063/1.3625426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from similar to 0.7 to 1.34 nm and particle densities of similar to 3.3-5.9 x 10(12) cm(-2) were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al(2)O(3) layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 10(5) s, which is promising for device applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3625426]

引用

页数：3

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