Gain and internal losses in GaSb-based 2 μm quantum-well diode-lasers

被引：0

作者：

Rattunde, M ^{[1
]}

Schmitz, J ^{[1
]}

Kiefer, R ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：278 / 279

页数：2

共 5 条

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[3] Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves [J].

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[4] Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers [J].

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Wagner, J .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4085-4087

[5]

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