Electronic Transport in Asymmetric Graphene Superlattice with Internal Potential Well

被引：2

作者：

Ban, Yue ^{[1
]}

Wang, Li-Gang ^{[2
]}

Chen, Xi ^{[3
,4
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

[3] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[4] Shanghai Univ, Shanghai Key Lab High Temp Supercond, Shanghai 200444, Peoples R China

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2015年 / 84卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.7566/JPSJ.84.064702

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic transport is investigated in the asymmetric graphene superlattice consisting of a periodic potential structure and a wide potential barrier, which are separated by an internal potential well. Our results show that under a certain condition a pronounced peak occurs in the original transmission gap region, and reveal that such an asymmetric graphene superlattice containing a potential well can be equivalent to a double-barrier structure. Furthermore, the controllable potential depth and width of quantum well have significant effects on the transmission probability and electronic conductance. All these phenomena may lead to applications in various graphene-based electronic devices.

引用

页数：5