Laser illumination for manipulation of hydrogen charge states in silicon solar cells

被引：18
作者：
Hamer, Phillip [1 ]
Wang, Sisi [1 ]
Hallam, Brett [1 ]
Wenham, Stuart [1 ]
Chong, Chee Mun [1 ]
Wenham, Alison [1 ]
Abbott, Malcolm [1 ]
机构：
[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 02期
关键词：
silicon; hydrogen; defects; passivation; solar cells; PASSIVATION; DEFECTS; WAFERS;
D O I：
10.1002/pssr.201409495
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This Letter investigates the important parameters of illumination for control of hydrogen charge states in p-type silicon solar cells. Through variations in the wavelength and intensity of illumination, evidence is provided for the importance of the neutral charge state of interstitial hydrogen, H-0, for the passivation of defects in upgraded metallurgical grade (UMG) silicon. It is shown that through this approach minority carrier lifetimes may be achieved in excess of those realised through previous techniques, resulting in open-circuit voltages (iV(OC)) over 710 mV. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：111 / 114
页数：4
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