Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells

被引：17

作者：

Alayan, M. ^{[1
]}

Bagatin, M. ^{[2
]}

Gerardin, S. ^{[2
,3
]}

Paccagnella, A. ^{[2
,3
]}

Larcher, L. ^{[4
]}

Vianello, E. ^{[1
]}

Nowak, E. ^{[1
]}

De Salvo, B. ^{[1
]}

Perniola, L. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble, France

[2] Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy

[3] Ist Nazl Fis Nucl, I-35131 Padua, Italy

[4] Univ Modena & Reggio Emilia, I-42122 Modena, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 08期

关键词：

Flash; physics-based simulations; radiation effects; resistive memories; single-event upset; ELECTRICAL CHARACTERISTICS; IONIZING-RADIATION; TAOX; MEMORIES; UPSETS; IMPACT;

D O I：

10.1109/TNS.2017.2721980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells on resistance distribution and programming voltages. The irradiation experiment has been performed without any applied bias (retention mode). Reasons for the observed hardness are discussed using physics-based simulations. Moreover, simulations put in evidence that the cell might be sensitive if it is struck during a read operation, since the applied read voltage prevents the instantaneous recombination of the generated defects due to the Coulomb interaction between oxygen ions and vacancies.

引用

页码：2038 / 2045

页数：8

共 42 条

[1] Alayan M., 2016, RAD EFF COMP SYST C
[2] [Anonymous], P 21 AM C INF SYST
[3] [Anonymous], P IEEE AER C MAR
[4] [Anonymous], 2014, P IEEE AER C MAR, DOI DOI 10.1109/AERO.2014.6836465
[5] Impact of Alpha Particles on the Electrical Characteristics of TiO2 Memristors
Barnaby, H. J.
Malley, S.
Land, M.
Charnicki, S.
Kathuria, A.
Wilkens, B.
DeIonno, E.
Tong, W. M.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 2838 - 2844
[6] Single- and Multiple-Event Induced Upsets in HfO2/Hf 1T1R RRAM
Bennett, William G.
Hooten, Nicholas C.
Schrimpf, Ronald D.
Reed, Robert A.
Mendenhall, Marcus H.
Alles, Michael L.
Bi, Jinshun
Zhang, En Xia
Linten, Dimitri
Jurzak, Malgorzata
Fantini, Andrea
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (04) : 1717 - 1725
[7] The Impact of X-Ray and Proton Irradiation on HfO2/Hf-Based Bipolar Resistive Memories
Bi, J. S.
Han, Z. S.
Zhang, E. X.
McCurdy, M. W.
Reed, R. A.
Schrimpf, R. D.
Fleetwood, D. M.
Alles, M. L.
Weller, R. A.
Linten, D.
Jurczak, M.
Fantini, A.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4540 - 4546
[8] Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic HfO2
Bradley, Samuel R.
Shluger, Alexander L.
Bersuker, Gennadi
[J]. PHYSICAL REVIEW APPLIED, 2015, 4 (06):
[9] Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?
Bradley, Samuel R.
Bersuker, Gennadi
Shluger, Alexander L.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (41)
[10] Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories
Chen, An
[J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) : 57 - 59

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