Structural stability and adatom diffusion at steps on hydrogenated Si(100) surfaces

被引:66
作者
Jeong, S [1 ]
Oshiyama, A [1 ]
机构
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 305, Japan
关键词
D O I
10.1103/PhysRevLett.81.5366
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present first-principles total-energy calculations which reveal microscopic structures of the steps and mechanisms of the adatom diffusion on hydrogenated Si(100) surfaces. Energetics among several types of the steps depends on the hydrogen chemical potential mu(H), and the nonrebonded structure is more stable than the rebonded one fur a wide range of mu(H). Calculations of the diffusion pathways and activation barriers for the adatom show that the Schwoebel barrier is absent near the single-layer steps. It is also found that the nonrebonded S-B step is a deep sink for the adatom in epitaxial growth.
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收藏
页码:5366 / 5369
页数:4
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