GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

被引：54

作者：

Radu, I ^{[1
]}

Szafraniak, I ^{[1
]}

Scholz, R ^{[1
]}

Alexe, M ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 12期

关键词：

D O I：

10.1063/1.1627459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transfer of GaAs layers onto Si by helium and/or hydrogen implantation and wafer bonding was investigated. The optimum conditions for achieving blistering/splitting only after postimplantation annealing were experimentally obtained. It was found that specific implantation conditions induce large area exfoliation instead of blistering after annealing of unbonded GaAs. This effect is related to a narrow size and/or a depth distribution of the platelets in as-implanted GaAs and their evolution with annealing. The influence of substrate orientation in blistering/splitting of GaAs was also investigated. Thin GaAs layers were transferred onto silicon by a combination of He and/or H implantation, wafer bonding and low temperature annealing. (C) 2003 American Institute of Physics.

引用

页码：7820 / 7825

页数：6

共 29 条

[1] Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ [J].

Agarwal, A ;

Haynes, TE ;

Venezia, VC ;

Holland, OW ;

Eaglesham, DJ .

APPLIED PHYSICS LETTERS, 1998, 72 (09) :1086-1088

[2] Low temperature GaAs/Si direct wafer bonding [J].

Alexe, M ;

Dragoi, V ;

Reiche, M ;

Gösele, U .

ELECTRONICS LETTERS, 2000, 36 (07) :677-678

[3] Smart-Cut® process using metallic bonding:: Application to transfer of Si, GaAs, InP thin films [J].

Aspar, B ;

Jalaguier, E ;

Mas, A ;

Locatelli, C ;

Rayssac, O ;

Moriceau, H ;

Pocas, S ;

Papon, AM ;

Michaud, JF ;

Bruel, M .

ELECTRONICS LETTERS, 1999, 35 (12) :1024-1025

[4]

AUBERTONHERVE AJ, 1998, P 8 INT S SIL MAT SC, V2, P1341

[5] USE OF ZNSE AS AN INTERLAYER FOR GAAS GROWTH ON SI [J].

BRINGANS, RD ;

BIEGELSEN, DK ;

SWARTZ, LE ;

PONCE, FA ;

TRAMONTANA, JC .

APPLIED PHYSICS LETTERS, 1992, 61 (02) :195-197

[6]

Bruel M, 1995, 1995 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, P178, DOI 10.1109/SOI.1995.526518

[7]

Bruel M, 1999, ELEC SOC S, V99, P203

[8] Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates [J].

Carlin, JA ;

Ringel, SA ;

Fitzgerald, EA ;

Bulsara, M ;

Keyes, BM .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1884-1886

[9] Silicon carbide on insulator formation by the Smart-Cut(R) process [J].

DiCioccio, L ;

Letertre, F ;

LeTiec, Y ;

Papon, AM ;

Jaussaud, C ;

Bruel, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :349-356

[10] THE EFFECT OF SUBSTRATE GROWTH AREA ON MISFIT AND THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROSTRUCTURES [J].

FITZGERALD, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :782-788

← 1 2 3 →