EUVL System - Moving Towards Production

被引:18
作者
Meiling, Hans [1 ]
Buzing, Nico [1 ]
Cummings, Kevin [2 ]
Harned, Noreen [3 ]
Hultermans, Bas [1 ]
de Jonge, Roel [1 ]
Kessels, Bart [2 ]
Kuerz, Peter [4 ]
Lok, Sjoerd [1 ]
Lowisch, Martin [4 ]
Mallman, Joerg [1 ]
Pierson, Bill [2 ]
Wagner, Christian [1 ]
van Dijk, Andre [1 ]
van Setten, Eelco [1 ]
Zimmerman, John [3 ]
机构
[1] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands
[2] ASML, Albany, NY 12203 USA
[3] ASML Wilton, Wilton, CT 06897 USA
[4] Carl Zeiss SMT AG, D-73447 Oberkochen, Germany
来源
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES | 2009年 / 7271卷
关键词
EUV lithography; system performance; sources; resist images; devices; high volume manufacturing; ASML; PROGRESS;
D O I
10.1117/12.814041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the technology that will enable this for 27nm production and below. ASML is actively engaged in the development of a multi generation production EUVL system platform that builds on TWINSCAN (TM) technology and the designs and experience gained from the build, maintenance, and use of the Alpha Demo Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. In this paper, we will present our EUVL roadmap, and the manufacturing status of the projection lens for our first production system. Included will also be some test data on the new reticle pods. Experimental results from ADT showing the progress in imaging (28 nm half pitch 1: 1 lines/spaces CDU similar to 10%), single machine overlay down to 3 nm, and resist complete the paper.
引用
收藏
页数:15
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