Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor

被引：14

作者：

Hung, Ching-Wen ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Tsai, Yan-Ying ^{[1
]}

Chen, Tzu-Pin ^{[1
]}

Chen, Li-Yang ^{[1
]}

Chu, Kuei-Yi ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 128卷 / 02期

关键词：

Pt; InAlAs; Schottky barrier height; thermionic emission; field emission; series resistance; hydrogen;

D O I：

10.1016/j.snb.2007.07.034

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

By combining the advantages of a catalytic Pt metal with an InAlAs material system, an interesting hydrogen sensor is fabricated and demonstrated. The Pt/InAlAs Schottky diode-type sensor exhibits high sensing performance toward hydrogen gas. A comparative study between forward and reverse biases is presented. A simple detection model is proposed to elucidate the hydrogen sensing behavior under forward and reverse biases. Thermionic emission (TE) and field emission (FE) exhibit considerable influences on the hydrogen sensing properties. Moreover, the temperature-dependent hydrogen detection characteristics are presented and studied. High sensor response is observed under reverse voltage, while large current variation is found under forward voltage. It is worth to note that this sensor shows a widespread reverse voltage-operating regime (0 to -5 V) with stable and flat sensing curves. The effective Schottky barrier height change and the series resistance variation, from the Norde plots, are -87.0 meV and -288 Omega, respectively, in 10,000 ppm H-2/air at 303 K. Based on the significant advantage of integration compatibility with InP-based electronic devices, the studied device reveals the promise in smart sensor and micro-electro-mechanical system (MEMS) applications. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：574 / 580

页数：7

共 31 条

[21] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[22] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHNO, H ;

WOOD, CEC ;

RATHBUN, L ;

MORGAN, DV ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4033-4037

[23] INFRARED CYCLOTRON RESONANCE IN N-TYPE INAS ANAND INP [J].

PALIK, ED ;

WALLIS, RF .

PHYSICAL REVIEW, 1961, 123 (01) :131-&

[24] WATER PRODUCTION ON PALLADIUM IN HYDROGEN OXYGEN ATMOSPHERES [J].

PETERSSON, LG ;

DANNETUN, HM ;

LUNDSTROM, I .

SURFACE SCIENCE, 1985, 163 (01) :273-284

[25] THE WATER-FORMING REACTION ON PALLADIUM [J].

PETERSSON, LG ;

DANNETUN, HM ;

LUNDSTROM, I .

SURFACE SCIENCE, 1985, 161 (01) :77-100

[26] SCHOTTKY-BARRIER HEIGHTS OF N-TYPE AND P-TYPE AL0.48IN0.52AS [J].

SADWICK, LP ;

KIM, CW ;

TAN, KL ;

STREIT, DC .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :626-628

[27] Pd/porous-GaAs Schottky contact for hydrogen sensing application [J].

Salehi, A ;

Nikfarjam, A ;

Kalantari, DJ .

SENSORS AND ACTUATORS B-CHEMICAL, 2006, 113 (01) :419-427

[28] AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals [J].

Song, JH ;

Lu, W ;

Flynn, JS ;

Brandes, GR .

SOLID-STATE ELECTRONICS, 2005, 49 (08) :1330-1334

[29] ENERGY-BAND STRUCTURE OF ALUMINUM ARSENIDE [J].

STUKEL, DJ ;

EUWEMA, RN .

PHYSICAL REVIEW, 1969, 188 (03) :1193-&

[30]

Sze S.M., 1981, PHYSICS SEMICONDUCTO

← 1 2 3 4 →