Effects of thermal annealing on In-induced metastable defects in InGaN films

被引：7
作者：
Hung, H.
Lam, K. T.
Chang, S. J. [1 ]
Kuan, H.
Chen, C. H.
Liaw, U. H.
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Leader Univ, Dept Informat Commun, Tainan 701, Taiwan
[3] Far E Univ, Dept Elect Engn, Tainan Country 744, Taiwan
[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
[5] China Inst Technol, Dept Avion, Hsinchu 312, Taiwan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2007年 / 10卷 / 2-3期
关键词：
InGaN; MOCVD; PPC; XRD; SIMS;
D O I：
10.1016/j.mssp.2007.05.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the effects of thermal annealing on the properties of InGaN layers. From secondary ion mass spectroscopy results, it was found that severe In desorption occurred after annealing. Photoluminescence and X-ray diffraction results indicate that significant amounts of In vacancy-related defects exist in the annealing samples. It was also found that persistent photoconductivity decay time constants were 211, 893 and 1040 s, while the decay exponents were 0.153, 0.120 and 0.213 for the as-grown, 800 degrees C-annealed and 1000 degrees C-annealed InGaN epitaxial layers, respectively. (0 2007 Elsevier Ltd. All rights reserved.
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页码：112 / 116
页数：5
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