Radiation stability of nanostructured hydroxyapatiteCa10 (PO4)6(OH)2 under ion irradiations

被引:7
|
作者
Zhou, Jianren [1 ]
Kirk, Mark [2 ]
Baldo, Pete [2 ]
Lu, Fengyuan [1 ]
机构
[1] Louisiana State Univ, Dept Mech & Ind Engn, Baton Rouge, LA 70803 USA
[2] Argonne Natl Lab, Div Nucl Engn, Lemont, IL 60439 USA
关键词
Surface; Grain boundary; Amorphization; Nanostructured hydroxyapatite; INDUCED AMORPHIZATION RESISTANCE; GRAIN-BOUNDARIES; INDUCED DEFECTS; RECRYSTALLIZATION; TOLERANCE; SURFACE; DAMAGE; ENERGY;
D O I
10.1016/j.jnucmat.2021.153271
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Radiation stability of nanostructured hydroxyapatite with different interfacial structure is studied. Hydroxyapatite nanoparticle (HAp-np) is fabricated by calcination in muffle furnace and densified nanocrystalline hydroxyapatite (HAp-nc) is synthesized by spark plasma sintering. X-ray diffraction (XRD) and transmission electron microscopy (TEM) characterizations show the hexagonal structure for both HAp-np and HAp-nc. Irradiation responses of HAp-np and HAp-nc are studied via in situ TEM techniques. The samples are irradiated with 1 MeV Kr2+ ions over the temperature range of 150 K to 523 K. In situ TEM observations reveal a higher critical amorphization dose of HAp-nc (0.075 dpa) compared to 0.05 dpa of HAp-np at room temperature, indicating enhanced amorphization resistance. The radiation tolerance shows a great dependence on temperature, and a higher critical dose can be observed at elevated temperatures. A lower critical amorphization temperature (T-c) of HAp-nc (similar to 437 K) than HAp-np (similar to 545 K) indicates better radiation tolerance since the lower Tc shows better defect annealing ability. This better radiation tolerance of HAp-nc is attributed to the higher sink strength and lower interface energy carried by densified grain boundaries as free-standing open surfaces of HAp-np can carry more isolated dangling bonds that results in a higher interface energy. This excess interface energy can lower the energy difference between crystalline phase and amorphous state, leading to HAp-np to be less radiation resistant. Radiation-induced amorphization is attributed to the accumulation of oxygen vacancies and the glass-like structure rearranged by displaced oxygen and phosphorus atoms. (C) 2021 Elsevier B.V. All rights reserved.
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页数:8
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