N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

被引：18

作者：

Lemettinen, Jori ^{[1
]}

Okumura, Hironori ^{[2
,3
]}

Palacios, Tomas ^{[3
]}

Suihkonen, Sami ^{[1
]}

机构：

[1] Aalto Univ, Dept Elect & Nanoengn, POB 13500, FIN-00076 Aalto, Finland

[2] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 10期

基金：

芬兰科学院;

关键词：

ELECTRON-MOBILITY TRANSISTORS; MOVPE GROWTH; GAN; FACE; DEPOSITION; CARBON;

D O I：

10.7567/APEX.11.101002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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