Real-time monitoring of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy

被引：8

作者：

Lee, JS ^{[1
]}

Masumoto, Y ^{[1
]}

机构：

[1] Tsukuba Res Consortium, JST, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

ellipsometry; monolayer oscillation; layer-by-layer growth; GaAs; InAs; metalorganic vapor-phase epitaxy;

D O I：

10.1016/S0022-0248(00)00663-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ellipsometry signal oscillations were clearly seen during metalorganic vapor-phase epitaxy (MOVPE) of III-V materials under high sample rotation at 1400rpm. The ellipsometric signal was found to oscillate at a period corresponding to 1 monolayer of MOVPE growth. Oscillations correlated with the formation of islands due to nucleation on terraces during the growth of 1 monolayer. Layer thickness and composition of AlGaAs and InGaAs were precisely determined in situ. Critical layer thickness and In composition for InGaAs quantum dot formation were also evaluated directly from in situ ellipsometry data. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：111 / 116

页数：6

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