A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

被引：28

作者：

Ji, LW ^{[1
]}

Su, YK

Chang, SJ

Wu, LW

Fang, TH

Xue, QK

Lai, WC

Chiou, YZ

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

[4] So Taiwan Univ Technol, Dept Mech Engn, Yong Kan 710, Taiwan

[5] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

MATERIALS LETTERS | 2003年 / 57卷 / 26-27期

关键词：

InGaN; quantum dot; atomic force microscopy; PL; FWHM;

D O I：

10.1016/S0167-577X(03)00293-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 run. The QDs density is about 2 x 1010 cm(-2). Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：4218 / 4221

页数：4

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