The growth mechanism of GaN with different H2/N2 carrier gas ratios

被引：13

作者：

Cho, Yong Suk ^{[1
]}

Hardtdegen, Hilde ^{[1
]}

Kaluza, Nicoleta ^{[1
]}

Steins, Roger ^{[1
]}

Heidelberger, Gero ^{[1
]}

Lueth, Hans ^{[1
]}

机构：

[1] Ctr Nanoelect Syst Informat Technol, Inst Bio & Nanosyst IBN 1, Res Ctr Juelich, D-52425 Julich, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 307卷 / 01期

关键词：

surface structure; metalorganic vapor phase epitaxy; nitrides;

D O I：

10.1016/j.jcrysgro.2007.05.058

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Undoped GaN epilayers were grown on sapphire (0 0 01) substrates using different H-2/N-2 carrier gas ratios (0%, 50%, 70%, 80%, and 100% N-2 content in the mixtures) in metal organic vapor phase epitaxy (MOVPE). Growth was observed in situ by reflectometry. Additionally experiments were carried out in which growth was stopped in the high-temperature growth step for the same carrier gas mixtures. The morphology development was correlated with the structural and electrical characteristics of the layers. (C) 2007 Elsevier B.V. All rights reserved.

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页码：6 / 13

页数：8

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