Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

被引：20

作者：

Huang, Xuanqi ^{[1
]}

Fu, Houqiang ^{[1
]}

Chen, Hong ^{[1
]}

Lu, Zhijian ^{[1
]}

Ding, Ding ^{[1
]}

Zhao, Yuji ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 21期

关键词：

OPTICAL-ABSORPTION EDGE;

D O I：

10.1063/1.4953006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN semiconductors are promising candidates for high-efficiency next-generation thin film solar cells. In this work, we study the photovoltaic performance of single-junction and two-junction InGaN solar cells using a semi-analytical model. We analyze the major loss mechanisms in InGaN solar cell including transmission loss, thermalization loss, spatial relaxation loss, and recombination loss. We find that transmission loss plays a major role for InGaN solar cells due to the large bandgaps of III-nitride materials. Among the recombination losses, Shockley-Read-Hall recombination loss is the dominant process. Compared to other III-V photovoltaic materials, we discovered that the emittance of InGaN solar cells is strongly impacted by Urbach tail energy. For two-and multi-junction InGaN solar cells, we discover that the current matching condition results in a limited range of top-junction bandgaps. This theoretical work provides detailed guidance for the design of high-performance InGaN solar cells. Published by AIP Publishing.

引用

页数：7

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