Improvement of ohmic contact to P-type GaN using two-step activation processing

被引：0

作者：

Yu, ZN ^{[1
]}

Xue, W ^{[1
]}

Seo, JW ^{[1
]}

Yu, SJ ^{[1
]}

机构：

[1] Beijing Inst Technol, Sch Informat Engn, Dept Photoelect Engn, Beijing 100081, Peoples R China

来源：

SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES | 2005年 / 5624卷

关键词：

GaN; rapid thermal annealing; ohmic contact;

D O I：

10.1117/12.572520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and IN curve. In the two-step RTA process, the first low temperature step (600 degrees C) with a long annealing time (4 min) was followed by the second high temperature (850 degrees C) step with a short annealing time. A hole concentration of 1.39 x 10(18)cm(-3) was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8 x 10(4) Omega.cm(2), These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

引用

页码：255 / 258

页数：4