Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

被引：1
作者：
van der Zouw, Kees [1 ]
Aarnink, Antonius A. I. [1 ]
Schmitz, Jurriaan [1 ]
Kovalgin, Alexey Y. [1 ]
机构：
[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源：
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2020年 / 33卷 / 02期
关键词：
Thin films; tungsten; hot-wire; atomic layer deposition; spectroscopic ellipsometry; scanning electron microscopy; X-ray diffraction; sheet resistance; contact resistance; transfer length; temperature coefficient of resistance; field effect; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; RESISTIVITY; RESISTANCE; SILICON;
D O I：
10.1109/TSM.2020.2976886
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to similar to 4.6.10(-4) V-1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.
引用
收藏
页码：202 / 209
页数：8
相关论文
共 52 条
  • [41] Van der Pauw L.J., 1958, Philips Tech. Rev., V20, P220, DOI DOI 10.4236/JMP.2013.411179
  • [42] Van Der Pauw L. J., 1958, Philips Research Reports, V13, P1
  • [43] van der Zouw K, 2019, IEEE INT C MICROELEC, P48, DOI [10.1109/icmts.2019.8730954, 10.1109/ICMTS.2019.8730954]
  • [44] ANALYSIS OF SYMMETRICAL VANDERPAUW STRUCTURES WITH FINITE CONTACTS
    VERSNEL, W
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1261 - 1268
  • [45] OPTICAL-PROPERTIES OF CRYSTALLINE TUNGSTEN
    WEAVER, JH
    OLSON, CG
    LYNCH, DW
    [J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1293 - 1297
  • [46] INVESTIGATION OF RING STRUCTURES FOR METAL-SEMICONDUCTOR CONTACT RESISTANCE DETERMINATION
    WILLIS, AJ
    BOTHA, AP
    [J]. THIN SOLID FILMS, 1987, 146 (01) : 15 - 20
  • [47] Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films
    Yang, Mengdi
    Aarnink, Antonius A. I.
    Schmitz, Jurriaan
    Kovalgin, Alexey Y.
    [J]. THIN SOLID FILMS, 2018, 649 : 17 - 23
  • [48] Effects of Oxygen, Nitrogen and Fluorine on the Crystallinity of Tungsten by Hot-Wire Assisted ALD
    Yang, Mengdi
    Aarnink, Antonius A. I.
    Wolters, Rob A. M.
    Schmitz, Jurriaan
    Kovalgin, Alexey Y.
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (12) : P839 - P844
  • [49] Low-resistivity α-phase tungsten films grown by hot-wire assisted atomic layer deposition in high-aspect-ratio structures
    Yang, Mengdi
    Aarnink, Antonius A. I.
    Schmitz, Jurriaan
    Kovalgin, Alexey Y.
    [J]. THIN SOLID FILMS, 2018, 646 : 199 - 208
  • [50] Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
    Yang, Mengdi
    Aarnink, Antonius A. I.
    Kovalgin, Alexey Y.
    Gravesteijn, Dirk. J.
    Wolters, Rob A. M.
    Schmitz, Jurriaan
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (01):
123456