Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

被引：1

作者：

van der Zouw, Kees ^{[1
]}

Aarnink, Antonius A. I. ^{[1
]}

Schmitz, Jurriaan ^{[1
]}

Kovalgin, Alexey Y. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2020年 / 33卷 / 02期

关键词：

Thin films; tungsten; hot-wire; atomic layer deposition; spectroscopic ellipsometry; scanning electron microscopy; X-ray diffraction; sheet resistance; contact resistance; transfer length; temperature coefficient of resistance; field effect; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; RESISTIVITY; RESISTANCE; SILICON;

D O I：

10.1109/TSM.2020.2976886

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to similar to 4.6.10(-4) V-1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.

引用

页码：202 / 209

页数：8

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[1] DEGRADATION OF THE THERMAL OXIDE OF THE SI/SIO2AL SYSTEM DUE TO VACUUM-ULTRAVIOLET IRRADIATION [J].