Thin film photovoltaics

被引：92
作者：
Schock, HW
机构：
[1] Inst. für Phys. Elektronik, Universität Stuttgart, D-70569 Stuttgart
来源：
APPLIED SURFACE SCIENCE | 1996年 / 92卷
关键词：
D O I：
10.1016/0169-4332(95)00303-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The different technologies for thin film photovoltaics are compared, Three main candidates namely a-Si, CdTe and CuInSe2 exhibit specific material properties which require different deposition processes and determine the design of photovoltaic devices. The properties of these material are discussed in detail in view of their advantages, drawbacks and potential for future developments. The present state of the art of thin film solar cell manufacturing is reviewed and the different deposition processes are analyzed in view of material quality and scalability. Specific differences of the semiconductors and their potential for high efficiency solar cells are evaluated. The formation and analysis of these junctions is described and ways for new developments and material combinations are shown. Recent results on the manufacturing issues and performance of thin film modules are reported.
引用
收藏
页码：606 / 616
页数：11
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