Magnetoresistance and Shubnikov-de Haas effect in magnetic ion-doped Bi2Se3

被引：31
作者：
Sugama, Y
Hayashi, T
Nakagawa, H
Miura, N
Kulbachnskii, VA
机构：
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119899, Russia
来源：
PHYSICA B | 2001年 / 298卷 / 1-4期
关键词：
Bi2Se3; Shubnikov-de Haas effect;
D O I：
10.1016/S0921-4526(01)00377-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of magnetic impurity Fe on single crystals Bi, Se, was investigated in high magnetic fields up to 40 T by Shubnikov-de Haas (SdH) effect. The samples were characterized by measurements of the Hall coefficient and the temperature dependence of resistance. From the SdH effect and the Hall effect it was found that the doping of Bi, Se, single crystals by Fe leads to an increase in the concentration of free electrons. The effect is ascribed to the presence of point defects formed by ionized iron atoms occupying interstitial positions in the crystal lattice. We have not observed any noticeable effect of Fe as a magnetic impurity. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码：531 / 535
页数：5
相关论文
共 10 条
1